2 GB
DDR31030 MHz
Boost Clock50 W
TDP28 nm
ProcessShare on Social Media
Share Radeon 520 Mobile DDR3 specifications with othersTechnical Specifications
Core Specifications
Architecture:
GCN 1.0
Process Size:
28 nm
Base Clock:
1030 MHz
Boost Clock:
1030 MHz
Shader Units:
320
TMUs:
20
ROPs:
8
Memory & Performance
Memory Size:
2 GB
Memory Type:
DDR3
Memory Bandwidth:
16.0 GB/s
Bus Interface:
PCIe 3.0 x8
TDP:
50 W
Cache & Die Information
L1 Cache:
16 KB
L2 Cache:
0.1 MB
Die Size:
56 mm²
Transistors:
0.7 billion
Transistor Density:
12.3 million/mm²
Physical Specifications
Power Connectors:
None
Quick Facts
Performance
Pixel Fill Rate
8.2 GPixel/s
Texture Fill Rate
20.6 GTexel/s
FP32 Performance
0.7 TFLOPS